Sign In | Join Free | My himfr.com |
|
Ask Lasest Price | |
Brand Name : | CQT |
Model Number : | LNOI Wafer |
Certification : | ISO:9001, ISO:14001 |
Price : | $2000/pc |
Payment Terms : | T/T |
Supply Ability : | 50000 pcs/Month |
Delivery Time : | 1-4 weeks |
4-Inch 6-Inch LNOI Wafers The Perfect Choice for Compact and High-Performance Optical Communication
Revolutionize Photonics with Ultra-Low-Loss LNOI Wafers
Next-Gen Lithium Niobate-on-Insulator (LNOI) Platform
Unlock unprecedented performance in integrated photonics with our
cutting-edge LNOI wafers, engineered for ultra-low optical loss and
sub-nanometer surface roughness . Combining stoichiometric LiNbO₃
thin films with thermally oxidized SiO₂ buried layers, our wafers
deliver >30x higher nonlinear efficiency than conventional bulk crystals, while enabling CMOS-compatible
fabrication.
Key Advantages
✓ Breakthrough EO Performance: Achieve >100 GHz modulation
bandwidth with r₃₃ >30 pm/V, ideal for 800G/1.6T coherent
transceivers.
✓ Quantum-Ready Precision: Custom periodic poling (PPLN) with
<5 nm domain error for entangled photon generation.
✓ Power-Hardened Design: Withstand >10 MW/cm² optical
intensity (Telcordia GR-468 certified).
Applications
▷ 5G/6G ultra-compact EO modulators
▷ Topological photonic circuits & optical computing
▷ Quantum frequency converters (C/L-band to telecom band)
▷ High-sensitivity LiDAR photodetectors
Technical Specifications
• Wafer Size: 100/150 mm diameter (2" to 6" customizable)
• LiNbO₃ Layer: X-cut/Z-cut, thickness 300±5 nm (standard)
• Buried Oxide: 1-3 μm SiO₂, breakdown voltage >200 V/μm
• Substrate: High-resistivity Si (>5 kΩ·cm)
LNOI Wafer | |||
Structure | LN / SiO2 / Si | LTV / PLTV | < 1.5 μm ( 5∗ 5 mm2 ) / 95% |
Diameter | Φ100 ± 0.2 mm | Edge Exclution | 5 mm |
Thickness | 500 ± 20 μm | Bow | Within 50 μm |
Primary Flat Length | 47.5 ± 2 mm 57.5 ± 2 mm | Edge Trimming | 2 ± 0.5 mm |
Wafer Beveling | R Type | Environmental | Rohs 2.0 |
Top LN Layer | |||
Average Thickness | 400/600±10 nm | Uniformity | < 40nm @17 Points |
Refraction index | no > 2.2800, ne < 2.2100 @ 633 nm | Orientation | X axis ± 0.3° |
Grade | Optical | Surface Ra | < 0.5 nm |
Defects | >1mm None; ≦1 mm Within 300 total | Delamination | None |
Scratch | >1cm None; ≦1cm Within 3 | Primary Flat | Perpendicular to +Y Axis ± 1° |
Isolation SiO2 Layer | |||
Average Thickness | 2000nm ± 15nm 3000nm ± 50nm 4700nm ± 100nm | Uniformity | < ±1% @17 Points |
Fab. Method | Thermal Oxide | Refraction index | 1.45-1.47 @ 633 nm |
Substrate | |||
Material | Si | Orientation | <100> ± 1° |
Primary Flat Orientation | <110> ± 1° | Resistivity | > 10 kΩ·cm |
Backside Contamination | No visible stain | Backside | Etch |
![]() |