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4 Inch LNOI Wafer Achieving Compact Photonic Integration

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    Buy cheap 4 Inch LNOI Wafer Achieving Compact Photonic Integration from wholesalers
     
    Buy cheap 4 Inch LNOI Wafer Achieving Compact Photonic Integration from wholesalers
    • Buy cheap 4 Inch LNOI Wafer Achieving Compact Photonic Integration from wholesalers

    4 Inch LNOI Wafer Achieving Compact Photonic Integration

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    Brand Name : BonTek
    Model Number : LNOI Wafer
    Certification : ISO:9001, ISO:14001
    Price : $2000/pc
    Payment Terms : T/T
    Supply Ability : 50000 pcs/Month
    Delivery Time : 1-4 weeks
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    4 Inch LNOI Wafer Achieving Compact Photonic Integration

    Achieving Compact Photonic Integration With 4-Inch LNOI Wafers


    LNOI stands for Lithium Niobate on Insulator, which is a specialized substrate technology used in the field of integrated photonics. LNOI substrates are fabricated by transferring a thin layer of lithium niobate (LiNbO3) crystal onto an insulating substrate, typically silicon dioxide (SiO2) or silicon nitride (Si3N4). This technology offers unique advantages for the development of compact and high-performance photonic devices.


    The fabrication of LNOI substrates involves bonding a thin layer of LiNbO3 onto an insulating layer using techniques like wafer bonding or ion-cutting. This results in a structure where LiNbO3 is suspended on a non-conductive substrate, providing electrical isolation and reducing the optical waveguide losses.


    Applications of LNOI:

    • Integrated Photonics
    • Optical Communication
    • Sensing and Metrology
    • Quantum Optics

    LNOI Wafer
    StructureLN / SiO2 / SiLTV / PLTV< 1.5 μm ( 5 5 mm2 ) / 95%
    DiameterΦ100 ± 0.2 mmEdge Exclution5 mm
    Thickness500 ± 20 μmBowWithin 50 μm
    Primary Flat Length47.5 ± 2 mm
    57.5 ± 2 mm
    Edge Trimming2 ± 0.5 mm
    Wafer BevelingR TypeEnvironmentalRohs 2.0
    Top LN Layer
    Average Thickness400/600±10 nmUniformity< 40nm @17 Points
    Refraction indexno > 2.2800, ne < 2.2100 @ 633 nmOrientationX axis ± 0.3°
    GradeOpticalSurface Ra< 0.5 nm
    Defects>1mm None;
    1 mm Within 300 total
    DelaminationNone
    Scratch>1cm None;
    1cm Within 3
    Primary FlatPerpendicular to +Y Axis ± 1°
    Isolation SiO2 Layer
    Average Thickness2000nm ± 15nm 3000nm ± 50nm 4700nm ± 100nmUniformity< ±1% @17 Points
    Fab. MethodThermal OxideRefraction index1.45-1.47 @ 633 nm
    Substrate
    MaterialSiOrientation<100> ± 1°
    Primary Flat Orientation<110> ± 1°Resistivity> 10 kΩ·cm
    Backside ContaminationNo visible stainBacksideEtch

    4 Inch LNOI Wafer Achieving Compact Photonic Integration4 Inch LNOI Wafer Achieving Compact Photonic Integration



    4 Inch LNOI Wafer Achieving Compact Photonic Integration


    4 Inch LNOI Wafer Achieving Compact Photonic Integration


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